Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

• Unité de recherche: INNOSUISSE
• Numéro de projet: 110.420 INT-ENG
• Titre du projet anglais: Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

Mots-clé (Anglais)

Engineering, Power electronics, Energy efficiency

Résumé des résultats (Abstract) (Anglais)

SiC power MOSFETs are being are being widely adopted in electric vehicle (EV)power conversion applications. This project will demonstrate the viability and advantages of utilising ALD-deposited oxides (SiO2 and high-k dielectrics such as aluminium oxide, Al2O3) in a commercial SiC MOSFET device.