Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

Research unit

INNOSUISSE

Project number

110.420 INT-ENG

Project title

Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

Texts for this project

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Key words	-	-	-
Abstract	-	-	-

Category	Text
Key words (English)	Engineering, Power electronics, Energy efficiency
Abstract (English)	SiC power MOSFETs are being are being widely adopted in electric vehicle (EV)power conversion applications. This project will demonstrate the viability and advantages of utilising ALD-deposited oxides (SiO2 and high-k dielectrics such as aluminium oxide, Al2O3) in a commercial SiC MOSFET device.