Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

• Forschungsstelle: INNOSUISSE
• Projektnummer: 110.420 INT-ENG
• Projekttitel Englisch: Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

Schlüsselwörter (Englisch)

Engineering, Power electronics, Energy efficiency

Abstract (Englisch)

SiC power MOSFETs are being are being widely adopted in electric vehicle (EV)power conversion applications. This project will demonstrate the viability and advantages of utilising ALD-deposited oxides (SiO2 and high-k dielectrics such as aluminium oxide, Al2O3) in a commercial SiC MOSFET device.