SiC-Si-Pro: Scientific Evidence-based Process-performance Improvement of Diamond Wire Sawing of Silicon Carbide Wafers for Power and Large Silicon Wafers for Semiconductors

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INNOSUISSE

Project number

51074.1 IP-ENG

Project title

SiC-Si-Pro: Prozessverbesserung für das Diamantdrahtsägen von Siliziumcarbidwafern und grossen Siliziumwafern für Halbleiter und auf Basis wissenschaftlicher Erkenntnisse

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	German	French	Italian	English
Key words	-	-	-
Abstract	-	-	-

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Category	Text
Key words (English)	Engineering, Mechanical engineering
Abstract (English)	When cutting wafers of silicon carbide for power semiconductors and silicon for integrated curcuits using diamond wire sawing, excessive wear on the tool and deformation of the wafer inhibit process optimisation. This project aims at overcoming these limitions.