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Forschungsstelle
INNOSUISSE
Projektnummer
18421.1 PFIW-IW
Projekttitel
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor|edge passivation.
Projekttitel Englisch
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor|edge passivation.

Texte zu diesem Projekt

 DeutschFranzösischItalienischEnglisch
Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Deutsch)
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor edge passivation.
Kurzbeschreibung
(Englisch)
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor|edge passivation.
Abstract
(Deutsch)
The IDEAL project focuses on DLC (diamond like carbon) material used for high power silicon bipolar device|edge junction termination passivation. The performances of high power bipolar devices such as Thyristors and|diodes are not only determined by the semiconductor device characteristics, but are also strongly dependent|on the quality of the device edge passivation (device edge passivation influences the leaked current level, the|blocking capability and the stability and durability of the final devices). High end bipolar products produced by|ABB Semiconductors in its Lenzburg factory used DLC for edge passivation.|Improvement in the DLC production process has been recognized by ABB Semiconductors as a key factor in|order to increase the bipolar products quality in terms of device performance and reliability and also in terms of|production efficiency
Abstract
(Englisch)
The IDEAL project focuses on DLC (diamond like carbon) material used for high power silicon bipolar device|edge junction termination passivation. The performances of high power bipolar devices such as Thyristors and|diodes are not only determined by the semiconductor device characteristics, but are also strongly dependent|on the quality of the device edge passivation (device edge passivation influences the leaked current level, the|blocking capability and the stability and durability of the final devices). High end bipolar products produced by|ABB Semiconductors in its Lenzburg factory used DLC for edge passivation.|Improvement in the DLC production process has been recognized by ABB Semiconductors as a key factor in|order to increase the bipolar products quality in terms of device performance and reliability and also in terms of|production efficiency