Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

• Unité de recherche: INNOSUISSE
• Numéro de projet: 18092.1 PFNM-NM
• Titre du projet anglais: Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

Description succincte (Allemand)

Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

Description succincte (Anglais)

Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

Résumé des résultats (Abstract) (Allemand)

The project targets the development and feasibility study of high efficient light conversion materials and structures fabricated by MOCVD epitaxial growth for new generation of miniaturized, efficient, broadband near-infrared (NIR) light sources emitting in the 1.1-2.1-µm wavelength range for low cost spectroscopy applications for a broad range of applications. The goal is to demonstrate high light conversion efficiency materials emitting at the short and long wavelength end.

Résumé des résultats (Abstract) (Anglais)

The project targets the development and feasibility study of high efficient light conversion materials and structures fabricated by MOCVD epitaxial growth for new generation of miniaturized, efficient, broadband near-infrared (NIR) light sources emitting in the 1.1-2.1-µm wavelength range for low cost spectroscopy applications for a broad range of applications. The goal is to demonstrate high light conversion efficiency materials emitting at the short and long wavelength end.