Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

• Research unit: INNOSUISSE
• Project number: 18092.1 PFNM-NM

Short description (German)

Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

Short description (English)

Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.

Abstract (German)

The project targets the development and feasibility study of high efficient light conversion materials and structures fabricated by MOCVD epitaxial growth for new generation of miniaturized, efficient, broadband near-infrared (NIR) light sources emitting in the 1.1-2.1-µm wavelength range for low cost spectroscopy applications for a broad range of applications. The goal is to demonstrate high light conversion efficiency materials emitting at the short and long wavelength end.

Abstract (English)

The project targets the development and feasibility study of high efficient light conversion materials and structures fabricated by MOCVD epitaxial growth for new generation of miniaturized, efficient, broadband near-infrared (NIR) light sources emitting in the 1.1-2.1-µm wavelength range for low cost spectroscopy applications for a broad range of applications. The goal is to demonstrate high light conversion efficiency materials emitting at the short and long wavelength end.