Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

• Unité de recherche: INNOSUISSE
• Numéro de projet: 12874.1;11 PFNM-NM
• Titre du projet anglais: Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Description succincte (Anglais)

Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Description succincte (Français)

Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Résumé des résultats (Abstract) (Anglais)

The project will combine the VCSEL expertise at BeamExpress with the analytic expertise at EPFL in order to provide crucial clues about the device failure modes and means for their rectification. Combining unique, industrial grade data on manufacturable VCSEL failure with advanced structural nano-characterization methods, it will attempt to connect micro- and nano-structural features with failure modes, and is expected to directly improve the position of BeamExpress in bringing long-wavelength, wafer-fused VCSELs to the market.

Résumé des résultats (Abstract) (Français)

The project will combine the VCSEL expertise at BeamExpress with the analytic expertise at EPFL in order to provide crucial clues about the device failure modes and means for their rectification. Combining unique, industrial grade data on manufacturable VCSEL failure with advanced structural nano-characterization methods, it will attempt to connect micro- and nano-structural features with failure modes, and is expected to directly improve the position of BeamExpress in bringing long-wavelength, wafer-fused VCSELs to the market.