Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Forschungsstelle

INNOSUISSE

Projektnummer

12874.1;11 PFNM-NM

Projekttitel

Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Projekttitel Englisch

Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis

Texte zu diesem Projekt

	Deutsch	Französisch	Italienisch	Englisch
Kurzbeschreibung	-		-
Abstract	-		-

Kategorie	Text
Kurzbeschreibung (Englisch)	Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis
Kurzbeschreibung (Französisch)	Advanced localized nano-characterization of wafer fused-VCSELs for device failure analysis
Abstract (Englisch)	The project will combine the VCSEL expertise at BeamExpress with the analytic expertise at EPFL in order to provide crucial clues about the device failure modes and means for their rectification. Combining unique, industrial grade data on manufacturable VCSEL failure with advanced structural nano-characterization methods, it will attempt to connect micro- and nano-structural features with failure modes, and is expected to directly improve the position of BeamExpress in bringing long-wavelength, wafer-fused VCSELs to the market.
Abstract (Französisch)	The project will combine the VCSEL expertise at BeamExpress with the analytic expertise at EPFL in order to provide crucial clues about the device failure modes and means for their rectification. Combining unique, industrial grade data on manufacturable VCSEL failure with advanced structural nano-characterization methods, it will attempt to connect micro- and nano-structural features with failure modes, and is expected to directly improve the position of BeamExpress in bringing long-wavelength, wafer-fused VCSELs to the market.