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Forschungsstelle
INNOSUISSE
Projektnummer
11548.2;7 PFIW-IW
Projekttitel
Development of industrial gas-metal plasma sources for the deposition of nanostructured GaN semiconductor layers for lighting applications
Projekttitel Englisch
Development of industrial gas-metal plasma sources for the deposition of nanostructured GaN semiconductor layers for lighting applications

Texte zu diesem Projekt
 DeutschFranzösischItalienischEnglisch
Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Deutsch)
Development of industrial gas-metal plasma sources for the deposition of nanostructured GaN semiconductor layers for lighting applications
Kurzbeschreibung
(Englisch)
Development of industrial gas-metal plasma sources for the deposition of nanostructured GaN semiconductor layers for lighting applications
Abstract
(Deutsch)
Epitaxial coating processes using low-energy gas-metal plasmas offer a promising path to the cost-effective manufacturing of highly energy-efficient LEDs for power-saving lighting applications and high-efficient thirdgeneration solar cells. The goal of the project is to move this innovative coating technology a step closer to industrial application and commercial exploitation by (a) developing and optimizing the plasma-processing equipment, (b) better understanding and controlling the fundamentals of the deposition process itself and (c) developing demonstrator devices based on the unique nanostructured GaN layers obtainable with the process.
Abstract
(Englisch)
Epitaxial coating processes using low-energy gas-metal plasmas offer a promising path to the cost-effective manufacturing of highly energy-efficient LEDs for power-saving lighting applications and high-efficient thirdgeneration solar cells. The goal of the project is to move this innovative coating technology a step closer to industrial application and commercial exploitation by (a) developing and optimizing the plasma-processing equipment, (b) better understanding and controlling the fundamentals of the deposition process itself and (c) developing demonstrator devices based on the unique nanostructured GaN layers obtainable with the process.