A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.

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Identifiant

Unité de recherche

INNOSUISSE

Numéro de projet

9675.2;5 PFIW-IW

Titre du projet

A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications

Titre du projet anglais

A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications

Textes relatifs à ce projet

	Allemand	Français	Italien	Anglais
Description succincte	-	-	-
Résumé des résultats (Abstract)	-	-	-

Textes saisis

Catégorie	Texte
Description succincte (Anglais)	A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.
Résumé des résultats (Abstract) (Anglais)	A novel electrode configuration is proposed for improved plasma-enhanced chemical vapour deposition (PECVD) of films such as amorphous silicon (a-Si:H) and micro-crystalline silicon (u-Si:H). The new electrodes are designed to de-couple the film deposition from the plasma generation zone. The deposited films are thus protected from damage by plasma ion bombardment, which is crucial for the manufacture of high-performance photovoltaic material. The new plasma reactor concept will be optimised in laboratory tests, and then developed into a R&D industrial reactor. Finally, a feasibility study for the 1 m2 reactor will be carried out to evaluate the usefulness and cost-of-ownership for production of next-generation thin film equipment.

Catégorie

Texte

Description succincte
(Anglais)

A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.

Résumé des résultats (Abstract)
(Anglais)

A novel electrode configuration is proposed for improved plasma-enhanced chemical vapour deposition (PECVD) of films such as amorphous silicon (a-Si:H) and micro-crystalline silicon (u-Si:H). The new electrodes are designed to de-couple the film deposition from the plasma generation zone. The deposited films are thus protected from damage by plasma ion bombardment, which is crucial for the manufacture of high-performance photovoltaic material. The new plasma reactor concept will be optimised in laboratory tests, and then developed into a R&D industrial reactor. Finally, a feasibility study for the 1 m2 reactor will be carried out to evaluate the usefulness and cost-of-ownership for production of next-generation thin film equipment.