A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications

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Research unit

INNOSUISSE

Project number

9675.2;5 PFIW-IW

Project title

A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications

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Category	Text
Short description (English)	A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.
Abstract (English)	A novel electrode configuration is proposed for improved plasma-enhanced chemical vapour deposition (PECVD) of films such as amorphous silicon (a-Si:H) and micro-crystalline silicon (u-Si:H). The new electrodes are designed to de-couple the film deposition from the plasma generation zone. The deposited films are thus protected from damage by plasma ion bombardment, which is crucial for the manufacture of high-performance photovoltaic material. The new plasma reactor concept will be optimised in laboratory tests, and then developed into a R&D industrial reactor. Finally, a feasibility study for the 1 m2 reactor will be carried out to evaluate the usefulness and cost-of-ownership for production of next-generation thin film equipment.

Category

Text

Short description
(English)

A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.

Abstract
(English)

A novel electrode configuration is proposed for improved plasma-enhanced chemical vapour deposition (PECVD) of films such as amorphous silicon (a-Si:H) and micro-crystalline silicon (u-Si:H). The new electrodes are designed to de-couple the film deposition from the plasma generation zone. The deposited films are thus protected from damage by plasma ion bombardment, which is crucial for the manufacture of high-performance photovoltaic material. The new plasma reactor concept will be optimised in laboratory tests, and then developed into a R&D industrial reactor. Finally, a feasibility study for the 1 m2 reactor will be carried out to evaluate the usefulness and cost-of-ownership for production of next-generation thin film equipment.