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Forschungsstelle
INNOSUISSE
Projektnummer
9675.2;5 PFIW-IW
Projekttitel
A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.
Projekttitel Englisch
A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications

Texte zu diesem Projekt

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Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Englisch)
A new low ion energy bombardment PECVD reactor for the deposition of thin film silicon for solar cell applications.
Abstract
(Englisch)
A novel electrode configuration is proposed for improved plasma-enhanced chemical vapour deposition (PECVD) of films such as amorphous silicon (a-Si:H) and micro-crystalline silicon (u-Si:H). The new electrodes are designed to de-couple the film deposition from the plasma generation zone. The deposited films are thus protected from damage by plasma ion bombardment, which is crucial for the manufacture of high-performance photovoltaic material. The new plasma reactor concept will be optimised in laboratory tests, and then developed into a R&D industrial reactor. Finally, a feasibility study for the 1 m2 reactor will be carried out to evaluate the usefulness and cost-of-ownership for production of next-generation thin film equipment.