Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

• Unité de recherche: INNOSUISSE
• Numéro de projet: 8355.1;3 NMPP-NM
• Titre du projet anglais: Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

Description succincte (Anglais)

Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

Résumé des résultats (Abstract) (Anglais)

A break-through deposition technology for thin film semiconductor deposition will be applied to Gallium Nitride based materials. The technology will allow fabrication of layer stacks suitable for light-emitting diodes (LEDs) at exceptionally high throughput levels and on large area silicon substrates, making it especially suitable for high volume LED fabrication for lighting applications. Deliverables include commissioning of a concept tool designed by the industrial partner, process development and cost-effective fabrication of LED-quality GaN-layers. The project will enable fast commercialization of the technology by Swiss industry and contribute to the latter's competitiveness on an international scale.