Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

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Projektnummer

8355.1;3 NMPP-NM

Projekttitel

Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

Projekttitel Englisch

Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

Texte zu diesem Projekt

	Deutsch	Französisch	Italienisch	Englisch
Kurzbeschreibung	-	-	-
Abstract	-	-	-

Erfasste Texte

Kategorie	Text
Kurzbeschreibung (Englisch)	Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting
Abstract (Englisch)	A break-through deposition technology for thin film semiconductor deposition will be applied to Gallium Nitride based materials. The technology will allow fabrication of layer stacks suitable for light-emitting diodes (LEDs) at exceptionally high throughput levels and on large area silicon substrates, making it especially suitable for high volume LED fabrication for lighting applications. Deliverables include commissioning of a concept tool designed by the industrial partner, process development and cost-effective fabrication of LED-quality GaN-layers. The project will enable fast commercialization of the technology by Swiss industry and contribute to the latter's competitiveness on an international scale.

Kategorie

Text

Kurzbeschreibung
(Englisch)

Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting

Abstract
(Englisch)

A break-through deposition technology for thin film semiconductor deposition will be applied to Gallium Nitride based materials. The technology will allow fabrication of layer stacks suitable for light-emitting diodes (LEDs) at exceptionally high throughput levels and on large area silicon substrates, making it especially suitable for high volume LED fabrication for lighting applications. Deliverables include commissioning of a concept tool designed by the industrial partner, process development and cost-effective fabrication of LED-quality GaN-layers. The project will enable fast commercialization of the technology by Swiss industry and contribute to the latter's competitiveness on an international scale.