Ferroelectric capacitor integration in standard CMOS process for low-voltage low-power non volatile memories

Research unit

INNOSUISSE

Project number

3989.2;5 KTS

Project title

Ferroelectric capacitor integration in standard CMOS process for low-voltage low-power non volatile memories

Texts for this project

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Short description (French)	Ferroelectric capacitor integration in standard CMOS process for low-voltage low-power non volatile memories