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Research unit
INNOSUISSE
Project number
18421.1 PFIW-IW
Project title
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor|edge passivation.
Project status Finished
 
Start date 01.03.2016
End date 01.07.2017
 
Granted total costs 499'411.00  CHF
Section 23 Förderbereich Engineering
Project category Project
Research type Applied research and development
NABS classification Industrial production and technology
 
Research disciplines
100 % T130 Production technology
Last modification of the project