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Research unit
INNOSUISSE
Project number
8355.1;3 NMPP-NM
Project title
Development of high throughput plasma processes for Gallium Nitride epitaxy at low substrate temperatures for applications in the field of lighting
Project status Finished
 
Start date 01.11.2006
End date 17.02.2009
 
Granted total costs 702'800.00  CHF
Section 22 Förderbereich Nano / Micro
Project category Project
Research type Applied research and development
NABS classification Non divisible / inclassable research
 
Research disciplines
100 % T170 Electronics
Last modification of the project
27.11.2014