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Research unit
INNOSUISSE
Project number
110.420 INT-ENG
Project title
Innovations in SiC Power MOSFET Gate technology through the use of ALD oxides

Participants

Research organisation: Innosuisse
Swiss Innovation Agency
Einsteinstrasse 2
CH-3003 Bern
+41 58 461 61 61 (Call Center)
info@innosuisse.ch
www.innosuisse.ch/
Contact person

 Bolat Sami
Hitachi Energy AG
www.uid.admin.ch/Detail.aspx?uid_id=CHE339599331

Implementation Partner


Hitachi Energy AG
www.uid.admin.ch/Detail.aspx?uid_id=CHE339599331