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Research unit
INNOSUISSE
Project number
18421.1 PFIW-IW
Project title
IDEAL Improved DLC Electrically Active Layer for high power bipolar silicon semiconductor|edge passivation.

Participants

Research organisation: Innosuisse
Swiss Innovation Agency
Einsteinstrasse 2
CH-3003 Bern
+41 58 461 61 61 (Call Center)
info@innosuisse.ch
www.innosuisse.ch/
Contact person

 Doktor
Sylvain Nicolay
CSEM Centre Suisse d'Electronique
et de Microtechnique
Rue Jaquet-Droz 1
CH-2002 Neuchâtel
sylvain.nicolay@csem.ch

Implementation Partner

Doktor
Sven Klaka
ABB Switzerland Ltd
Semiconductors
CHE-101.538.426
Fabrikstrasse 3
CH-5600 Lenzburg
+41 58 586 14 92
sven.klaka@ch.abb.com