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Research unit
INNOSUISSE
Project number
17476.1 PFEN-IW
Project title
Optimisation of the output-power of IGCT (Integrated Gate Commutated Thyristor) by thermo-mechanical modelling. MIP: ABB Semiconductors

Participants

Research organisation: Innosuisse
Swiss Innovation Agency
Einsteinstrasse 2
CH-3003 Bern
+41 58 461 61 61 (Call Center)
info@innosuisse.ch
www.innosuisse.ch/
Contact person

 Norbert Hofmann
FHNW
Fachhochschule Nordwestschweiz
Institut für nanotechnische Kunstst
Klosterzelgstrasse 2
CH-5210 Windisch
+41 56 202 73 98
norbert.hofmann@fhnw.ch

Implementation Partner

Doktor
Sven Klaka
ABB Switzerland Ltd
Semiconductors
CHE-101.538.426
Fabrikstrasse 3
CH-5600 Lenzburg
+41 58 586 14 92
sven.klaka@ch.abb.com