Ion Beam Sputtering of 2D materials # A new approach

• Forschungsstelle: INNOSUISSE
• Projektnummer: 47744.1 IP-ENG
• Projekttitel Englisch: Ion Beam Sputtering of 2D materials # A new approach

Kurzbeschreibung (Deutsch)

Ion Beam Sputtering of 2D materials # A new approach

Kurzbeschreibung (Englisch)

Ion Beam Sputtering of 2D materials # A new approach

Abstract (Deutsch)

Goal of the project is to design, build and utilize a new ion beam sputtering tool for the synthesis of 2D materials such as graphene and transition metal dichalcogenides. The potential of the new developed technology and processes for a number of innovative applications will be demonstrated.