Joining technology for next-generation high-power semiconductor lasers

• Unité de recherche: INNOSUISSE
• Numéro de projet: 41785.1 IP-ENG
• Titre du projet anglais: Joining technology for next-generation high-power semiconductor lasers

Description succincte (Allemand)

Joining technology for next-generation high-power semiconductor lasers

Description succincte (Anglais)

Joining technology for next-generation high-power semiconductor lasers

Résumé des résultats (Abstract) (Allemand)

The demand for higher output power in high-power semiconductor lasers persists. The focus of the development is on the packaging and cooling of the laser chip. This project evaluates joining technologies beyond the established hard soldering and shall achieve production readiness of such processes.