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Research unit
INNOSUISSE
Project number
41785.1 IP-ENG
Project title
Joining technology for next-generation high-power semiconductor lasers
Project status Approved (not yet in process)
 
Start date 01.09.2020
End date 01.09.2022
 
Granted total costs 308'927.00  CHF
Section 70 Engineering
Project category Project
Research type Applied research and development
NABS classification Industrial production and technology
 
Research disciplines
100 % T171 Microelectronics

Last modification of the project