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Research unit
INNOSUISSE
Project number
41785.1 IP-ENG
Project title
Joining technology for next-generation high-power semiconductor lasers

Texts for this project
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Short description
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Abstract
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CategoryText
Short description
(German)
Joining technology for next-generation high-power semiconductor lasers
Short description
(English)
Joining technology for next-generation high-power semiconductor lasers
Abstract
(German)
The demand for higher output power in high-power semiconductor lasers persists. The focus of the development is on the packaging and cooling of the laser chip. This project evaluates joining technologies beyond the established hard soldering and shall achieve production readiness of such processes.