Fortgeschrittenes SiC-Material für Leistungs-Elektronikgeräte

• Unité de recherche: OFEN
• Numéro de projet: SI/501529

Mots-clé (Allemand)

Leistungselektronik, SiC, Energieffizienz, IGBT, Diode

Mots-clé (Anglais)

Power Semiconductor, SiC, Energy efficiency, IGBT, PIN diode

Description succincte (Allemand)

Die Vision des AMPERE-Projektes ist es, die Entwicklung der "wide bandgap" (WBG) Silizium Carbide Hochleistung Halbleiter Bauelemente voranzutreiben, so dass es die nächste Generation von energieeffizienten Leistungselektronikverteilungstransformatoren und Mittelspannungsantrieben ermöglichen kann, Was einer potentiellen Energieeinsparung in der Schweiz von ~ 3,6 TWh entspricht, etwa 5% des gesamten Energieverbrauchs.

Description succincte (Anglais)

The vision of the AMPERE project is to advance significantly the development of the wide bandgap (WBG) semiconductor silicon carbide (SiC) high voltage power semiconductor devices, such that it can enable the next generation of energy efficient power electronics distribution transformers and medium voltage drives, representing a potential energy saving in Switzerland of ~3.6TWh, roughly 5% of the total energy consumption.

Rapport final (Anglais)

In the project AMPERE, HITACHI-ENERGY and the FHNW have developed advanced HV SiC device technologies beyond state-of-the-art. We have focused our efforts to develop technology platforms comprising design simulations, microtechnology processes, process integration schemes and characterization systems for 6.5 and 10 kV SiC switches and diodes. For these HV classes, SiC has strong potential to enable higher efficiency, lower size footprint converters with reduced number of levels, thereby, challenging current state-of-the-art Si IGBT based technologies. The devices fabricated in AMPERE are the first ones made in Switzerland, and as such a great technology step for the Swiss power electronics industry. This included high voltage SiC PiN diodes and MOSFETs, featuring enhanced performance and reliability. The project also supported the development of infrastructure development in Switzerland, that will further allow the development of the technology towards industrial products. The potential is underpinned by the strong collaboration and expertise of the involved partners. The results will now be used for the development of new HV device technologies, but also provide a basis for the development of new power electronics topologies and applications.

Documents annexés

• Final Report [PDF] 3'728 kB