High Volume Process for AlScN Thin Film deposition

• Unité de recherche: INNOSUISSE
• Numéro de projet: 18616.1 PFNM-NM
• Titre du projet anglais: High Volume Process for AlScN Thin Film deposition

Description succincte (Allemand)

High Volume Process for AlScN Thin Film deposition

Description succincte (Anglais)

High Volume Process for AlScN Thin Film deposition

Résumé des résultats (Abstract) (Allemand)

Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.

Résumé des résultats (Abstract) (Anglais)

Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.