High Volume Process for AlScN Thin Film deposition - Texts

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Research unit

INNOSUISSE

Project number

18616.1 PFNM-NM

Project title

High Volume Process for AlScN Thin Film deposition

Texts for this project

	German	French	Italian	English
Short description		-	-
Abstract		-	-

Inserted texts

Category	Text
Short description (German)	High Volume Process for AlScN Thin Film deposition
Short description (English)	High Volume Process for AlScN Thin Film deposition
Abstract (German)	Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution\|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with\|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an\|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.
Abstract (English)	Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution\|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with\|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an\|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.