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Forschungsstelle
INNOSUISSE
Projektnummer
18616.1 PFNM-NM
Projekttitel
High Volume Process for AlScN Thin Film deposition
Projekttitel Englisch
High Volume Process for AlScN Thin Film deposition

Texte zu diesem Projekt
 DeutschFranzösischItalienischEnglisch
Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Deutsch)
High Volume Process for AlScN Thin Film deposition
Kurzbeschreibung
(Englisch)
High Volume Process for AlScN Thin Film deposition
Abstract
(Deutsch)
Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.
Abstract
(Englisch)
Reactive sputter deposition process and film properties of the recently discovered, piezoelectric solid solution|system AlN(1-x)-ScN(x) are studied and optimized. The strong enhancement of piezoelectric properties with|increasing x is ideal to realize RF filters with larger bands for mobile communication. The target is an|industrially viable process for 200 mm wafers yielding uniform composition and piezoelectric properties.