High rate deposition of microcrystaline silicon for solar cell applications by means of a resonant network RF antenna

• Unité de recherche: INNOSUISSE
• Numéro de projet: 15082.1;7 PFIW-IW
• Titre du projet anglais: High rate deposition of microcrystaline silicon for solar cell applications by means of a resonant network RF antenna

Description succincte (Anglais)

High rate deposition of microcrystaline silicon for solar cell applications by means of a resonant network RF antenna

Description succincte (Français)

High rate deposition of microcrystaline silicon for solar cell applications by means of a resonant network RF antenna

Résumé des résultats (Abstract) (Anglais)

To change from the traditional capacitively coupled plasma reactor to inductively coupled devices might reduce the cost and increase the efficiency of thin film solar cells. In the present project a plasma box reactor equipped with a resonant network RF antenna will be constructed and, as main topic, PV related material will be aimed for under these conditions. Additional equipment of the plasma reactor with a biasing electrode will allow the ion bombardment of the substrate to optimize the material properties. The project will lead to a concept and design of a novel PECVD production reactor.

Résumé des résultats (Abstract) (Français)

To change from the traditional capacitively coupled plasma reactor to inductively coupled devices might reduce the cost and increase the efficiency of thin film solar cells. In the present project a plasma box reactor equipped with a resonant network RF antenna will be constructed and, as main topic, PV related material will be aimed for under these conditions. Additional equipment of the plasma reactor with a biasing electrode will allow the ion bombardment of the substrate to optimize the material properties. The project will lead to a concept and design of a novel PECVD production reactor.