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Unité de recherche
INNOSUISSE
Numéro de projet
8587.1;6 EPRP-IW
Titre du projet
Optimization of the plasma enhanced chemical vapor (PECVD) process for the deposition of SiOx barrier coatings on polymers
Titre du projet anglais
Optimization of the plasma enhanced chemical vapor (PECVD) process for the deposition of SiOx barrier coatings on polymers

Textes relatifs à ce projet

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Résumé des résultats (Abstract)
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Textes saisis


CatégorieTexte
Description succincte
(Anglais)
Optimization of the plasma enhanced chemical vapor (PECVD) process for the deposition of SiOx barrier coatings on polymers
Résumé des résultats (Abstract)
(Anglais)
The plasma enhanced chemical vapor deposition (PECVD) process for coating polymer films has several advantages over evaporation processes, which are regarding mainly coating quality. The main disadvantage of PECVD is the relatively low deposition rate of the barrier coatings which limits the line speed.The principal objectives of the present project is to increase the deposition rate in the PECVD process producing SiOx barrier coatings by decreasing powder formation and optimize the use of monomers while keeping excellent barrier characteristics of the coating. In order to achieve the goal of the project, basic research on the powder formation in the plasma will be made at the CRPP, whereas the industrial process development and testing of solutions shall be performed at Tetra Pak.