High rate deposition of microcrystalline silicon thin-film solar cell devices in industrial KAI PE-CVD reactor

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Identifiant

Unité de recherche

INNOSUISSE

Numéro de projet

6928.1;7 EPRP-IW

Titre du projet

High rate deposition of microcrystalline silicon thin-film solar cell devices in industrial KAI PE-CVD reactor

Textes relatifs à ce projet

	Allemand	Français	Italien	Anglais
Description succincte		-	-	-
Résumé des résultats (Abstract)		-	-	-

Textes saisis

Catégorie	Texte
Description succincte (Allemand)	High rate deposition of microcrystalline silicon thin-film solar cell devices in industrial KAI PE-CVD reactor
Résumé des résultats (Abstract) (Allemand)	Development of a fabrication process for high-performance microcrystalline silicon solar cells on industrial mass-production equipment is the aim.This requires single-chamber deposition of all doped and intrinsic silicon layers at high deposition rates. A medium-sized KAIS reactor (deposition area: 0.15m2) will be used for process development. Successful conclusion of the project will allow for future production of thin-film silicon solar modules with 10% efficiency in large-size KAI reactors (area 1.4m2) at very low fabrication costs (CHF1.5/Wp). (478 Zeichen)

Catégorie

Texte

Description succincte
(Allemand)

High rate deposition of microcrystalline silicon thin-film solar cell devices in industrial KAI PE-CVD reactor

Résumé des résultats (Abstract)
(Allemand)

Development of a fabrication process for high-performance microcrystalline silicon solar cells on industrial mass-production equipment is the aim.This requires single-chamber deposition of all doped and intrinsic silicon layers at high deposition rates. A medium-sized KAIS reactor (deposition area: 0.15m2) will be used for process development. Successful conclusion of the project will allow for future production of thin-film silicon solar modules with 10% efficiency in large-size KAI reactors (area 1.4m2) at very low fabrication costs (CHF1.5/Wp). (478 Zeichen)