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Research unit
INNOSUISSE
Project number
18092.1 PFNM-NM
Project title
Feasibility study of MOCVD epitaxial growth of high efficient light convertion materials for the broadband NIR emitters in the 1.1-2.1-µm wavelength range.
Project status Finished
 
Start date 01.11.2015
End date 01.07.2016
 
Granted total costs 98'974.00  CHF
Section 22 Förderbereich Nano / Micro
Project category Project
Research type Applied research and development
NABS classification Industrial production and technology
 
Research disciplines
100 % T171 Microelectronics
Last modification of the project