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Research unit
INNOSUISSE
Project number
17476.1 PFEN-IW
Project title
Optimisation of the output-power of IGCT (Integrated Gate Commutated Thyristor) by thermo-mechanical modelling. MIP: ABB Semiconductors
Project status Finished
 
Start date 01.05.2015
End date 01.03.2018
 
Granted total costs 414'834.00  CHF
Section 23 Förderbereich Engineering
Project category Project
Research type Applied research and development
NABS classification Industrial production and technology
 
Research disciplines
100 % T150 Material technology
Last modification of the project
16.12.2021