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Research unit
INNOSUISSE
Project number
17033.1;4 INNO13-16-IW
Project title
High Throughput Power Semiconductor Dynamic Testing Methodology utilizing Self-Heating Principles
Project status Finished
 
Start date 11.06.2014
End date 11.12.2014
 
Granted total costs 7'500.00  CHF
Section Projektförderung
Project category Project
Research type Applied research and development
NABS classification Non divisible / inclassable research
 
Research disciplines
100 % T190 Electrical engineering
Last modification of the project
27.11.2014