LAQUANI: Laser Quality III-V Nitrides

• Unité de recherche: PCRD EU
• Numéro de projet: 96.0041
• Titre du projet anglais: LAQUANI: Laser Quality III-V Nitrides

Mots-clé (Anglais)

Diode laser; Ill-V nitrides; epitaxy; optoelectronics

Autre Numéro de projet (Anglais)

EU project number: EP 20.968

Programme de recherche (Anglais)

EU-programme: 4. Frame Research Programme - 1.3 Telematic systems

Description succincte (Anglais)

See abstract

Partenaires et organisations internationales (Anglais)

CRHEA-CNRS; Valbonne (F) (Requérant principal), Aixtron Semiconductor Technologies; Aachen (D), University of Paderborn (D), University of Nottingham (UK), Polytechnic University of Madrid (E)

Résumé des résultats (Abstract) (Anglais)

The objective of the project is to fabricate and study GaN-based heterostructure laser diodes grown by homoepitaxy on GaN substrates and emitting in the blue to near UV region. The growth of single crystal GaN substrates, the development of the appropriate epitaxial growth techniques, the design of the heterostructure quantum well light emitting diode, and the development of the etching and metallisation procedures constitute the four main tasks in this study.
Solid state lasers operating in the blue and near UV spectral range will be key components in many important application areas. These areas include, but are not limited to, high-density optical storage systems such as CD-ROMs and compact disks, high resolution laser printers, digital imaging, visible holography, optical memories, optical computers and medical applications.
Within this project, IMOIEPFL is responsible for the development of a GaCI-NH3 vapor phase epitaxial deposition technique with the aim to obtain thick (> 100 um), large area (> 1 cm2 ) GaN layers which can be used as substrates for subsequent homoepitaxial growth of the light emitting diode and laser structures by MOVPE and/or MBE techniques.
A special reactor configuration has been designed in collaboration with the industrial partner and has been fully operational at EPFL for 15 months. Process parameters have been optimized and thick (> 20 um) high quality, mirror-smooth and transparent layers have been achieved with good uniformity over 5 cm diameter sapphire wafers. These layers have been transferred to the project partners for fabrication of light emitting diode (LED) and laser diode (LD) structures. In parallel, the device processing technology has been developed at EPFL and first blue LEDs have been realized and tested.

Références bases de données (Anglais)

Swiss Database: Euro-DB of the
State Secretariat for Education and Research
Hallwylstrasse 4
CH-3003 Berne, Switzerland
Tel. [phone]
Swiss Project-Number: 96.0041