PHILARIS / Probing by Heavy Ions and Lasers for an Assessment of Rad-hardness in Integrated Semiconductors.

• Unité de recherche: INNOSUISSE
• Numéro de projet: 110.374 INT-ENG
• Titre du projet anglais: PHILARIS / Probing by Heavy Ions and Lasers for an Assessment of Rad-hardness in Integrated Semiconductors.

Mots-clé (Anglais)

Engineering, Semi-conductors, Communication technologies, Micro processing

Résumé des résultats (Abstract) (Anglais)

PHILARIS presents a promising alternative to costly rad-hardness assessment methods that depend on particle accelerators. By harnessing the power of lasers to mimic radiation-induced effects on integrated circuits, we unlock a new era of efficient and economically viable rad-hardness testing.