PHILARIS / Probing by Heavy Ions and Lasers for an Assessment of Rad-hardness in Integrated Semiconductors.

Forschungsstelle

INNOSUISSE

Projektnummer

110.374 INT-ENG

Projekttitel

PHILARIS / Probing by Heavy Ions and Lasers for an Assessment of Rad-hardness in Integrated Semiconductors.

Projekttitel Englisch

PHILARIS / Probing by Heavy Ions and Lasers for an Assessment of Rad-hardness in Integrated Semiconductors.

Texte zu diesem Projekt

	Deutsch	Französisch	Italienisch	Englisch
Schlüsselwörter	-	-	-
Abstract	-	-	-

Kategorie	Text
Schlüsselwörter (Englisch)	Engineering, Semi-conductors, Communication technologies, Micro processing
Abstract (Englisch)	PHILARIS presents a promising alternative to costly rad-hardness assessment methods that depend on particle accelerators. By harnessing the power of lasers to mimic radiation-induced effects on integrated circuits, we unlock a new era of efficient and economically viable rad-hardness testing.