Abstract
(Englisch)
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In a multi-disciplinary approach, FIXIT aims at the development of a disruptive, ferroelectric ultra-low power memory and computing technology,
fostering the hardware implementation of novel AI-driven electronic systems. Ferroelectricity is the most energy-efficient non-volatile storage
technology. FIXIT leverages two recent European discoveries of CMOS compatible ferroelectric materials: ferroelectric HfO2 as first reported in
2011 by NaMLab – the coordinator of FIXIT, and ferroelectric wurtzite AlScN discovered by the Project partner CAU in 2019.
Our major goal is the scaling of ferroelectric synaptic devices to the <20nm regime while maintaining their analogue and multi-level switching
properties. Moreover, we aim at the integration of these scaled devices into ultra-dense crossbar arrays featuring non-volatile multi-bit digital
functionality and highly parallel multiply and accumulate operations, representing the synaptic interconnects calculation at the heart of AI-algorithms.
In our consortium we build on the vast, interdisciplinary, and complementary expertise of the 11 project partners (3 industries, 1 SME, 4 universities,
3 RTOs) covering know-how on material, process and device development, CMOS integration, equipment and manufacturing, physical and electrical
characterization, TCAD modelling, packaging, circuit design and system integration.
Pushing European research in this topic will sustain the first-mover advantage and contribute to the European industry capability to provide advanced
circuits for its needs. This is in-line with the European Chips Act, where the Commission has identified technological leadership in semiconductor
technologies as indispensable for European digital sovereignty, and decided to support the field with large investments. FIXIT will also support
Europe’s competitiveness in semiconductors with a systematic outreach to students, the training of young researchers and the building of international
cooperation.
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