Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

Research unit

INNOSUISSE

Project number

51090.1 IP-EE

Project title

Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

Texts for this project

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Short description		-	-
Abstract		-	-	-

Category	Text
Short description (German)	Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)
Short description (English)	Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)
Abstract (German)	ASPIRE aims at demonstrating 4H-SiC vertical power MOSFETs with improved performances in terms of on-state resistance and reliability by deploying the next generation of high-k gate stacks and interfaces via multilayer dielectrics and plasma treatments produced via large-scale proven processes.