Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

• Unité de recherche: INNOSUISSE
• Numéro de projet: 51090.1 IP-EE
• Titre du projet anglais: Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

Description succincte (Allemand)

Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

Description succincte (Anglais)

Next generAtion SiC Power electronIcs foR E-mobility (ASPIRE)

Résumé des résultats (Abstract) (Allemand)

ASPIRE aims at demonstrating 4H-SiC vertical power MOSFETs with improved performances in terms of on-state resistance and reliability by deploying the next generation of high-k gate stacks and interfaces via multilayer dielectrics and plasma treatments produced via large-scale proven processes.