MURMELi: Multi-channel Ultra-Resolution Mask Exposure Lithography

• Unité de recherche: INNOSUISSE
• Numéro de projet: 18188.1 PFNM-NM
• Titre du projet anglais: MURMELi: Multi-channel Ultra-Resolution Mask Exposure Lithography

Description succincte (Allemand)

MURMELi: Multi-channel Ultra-Resolution Mask Exposure Lithography

Description succincte (Anglais)

MURMELi: Multi-channel Ultra-Resolution Mask Exposure Lithography

Résumé des résultats (Abstract) (Allemand)

Build and optimize 1X Microlens Projection Lithography (MPL) with more than 500um free working distance and 2um (half-pitch) minimum feature size. The development of next-generation Mask Aligners comprises illumination engineering for different sources (i-line, high power diode laser, Excimer), source-mask optimization (SMO) and high-resolution wafer positioning and combines the simplicity of Mask Aligners with the advantages of Steppers.

Résumé des résultats (Abstract) (Anglais)