Pixisens - Electric transport across interfaces formed by low-temperature, oxide-free wafer bonding in monolithic pixel sensors for X-ray imaging applications

• Unité de recherche: INNOSUISSE
• Numéro de projet: 17703.1 PFNM-NM
• Titre du projet anglais: Pixisens - Electric transport across interfaces formed by low-temperature, oxide-free wafer bonding in monolithic pixel sensors for X-ray imaging applications

Description succincte (Allemand)

Pixisens - Electric transport across interfaces formed by low-temperature, oxide-free wafer bonding in monolithic pixel sensors for X-ray imaging applications

Description succincte (Anglais)

Pixisens - Electric transport across interfaces formed by low-temperature, oxide-free wafer bonding in monolithic pixel sensors for X-ray imaging applications

Résumé des résultats (Abstract) (Allemand)

The project supports the development of low-temperature direct wafer bonding processes providing material suitable for large-area high-resolution pixel detectors. Oxide-free bonding of 200 mm silicon wafers thinned to 10 -20 ìm is studied by scanning acoustic microscopy, scanning and transmission electron microscopy and high-resolution X-ray scattering to prove absence of interfacial voids, oxides and other impurities. Charge transfer will be assessed across bonded interfaces and in G-ray detector setup comprising epitaxial silicon-germanium absorbers. By demonstrating the validity of this novel concept, the project will contribute to (1) confirm the disruptive characteristics of the G-ray detector - including significant reduction of radiation dose, energy discrimination, superior spatial resolution, and dynamic imaging ¿ (2) acquire additional funding for building up G-ray¿s own manufacturing capability and (3) allow the company to enter the X-ray medical imaging market.

Résumé des résultats (Abstract) (Anglais)