Silicon Processing by Light Initiated Microwave Melting

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INNOSUISSE

Projektnummer

16217.1;4 PFIW-IW

Projekttitel

Silicon Processing by Light Initiated Microwave Melting

Projekttitel Englisch

Silicon Processing by Light Initiated Microwave Melting

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Texte zu diesem Projekt

	Deutsch	Französisch	Italienisch	Englisch
Kurzbeschreibung	-	-	-
Abstract	-	-	-

Erfasste Texte

Kategorie	Text
Kurzbeschreibung (Englisch)	Silicon Processing by Light Initiated Microwave Melting
Abstract (Englisch)	The project is a feasibility study of a novel Si processing method for potential wafering applications. The innovation lies in illuminating Si powder with specific light initiating efficient microwave coupling in a thermal radiation reflective environment. In PV, this cost-effective and energy-friendly technology will simplify the wafering by less processing steps, energy consumption and production cost with better control on the wafer thickness, size, shape, and quality.

Kategorie

Text

Kurzbeschreibung
(Englisch)

Silicon Processing by Light Initiated Microwave Melting

Abstract
(Englisch)

The project is a feasibility study of a novel Si processing method for potential wafering applications. The innovation lies in illuminating Si powder with specific light initiating efficient microwave coupling in a thermal radiation reflective environment. In PV, this cost-effective and energy-friendly technology will simplify the wafering by less processing steps, energy consumption and production cost with better control on the wafer thickness, size, shape, and quality.