Improvement of a Swiss-produced 0.18um CMOS embedded flash non-volatile memory, with extension to the 0.11um node

• Research unit: INNOSUISSE
• Project number: 13513.1;3 PFFLE-NM

Short description (English)

Improvement of a Swiss-produced 0.18um CMOS embedded flash non-volatile memory, with extension to the 0.11um node

Short description (French)

Improvement of a Swiss-produced 0.18um CMOS embedded flash non-volatile memory, with extension to the 0.11um node

Abstract (English)

Improvement of the Swiss developed and manufactured EM¿s CMOS 180nm embedded Flash memory technology used for new product developments starting in 2012, and extension to 0.11um. Low power Flash memory is one of the unique selling points of EM products. Goal is to minimize the overall area of flash cell array and memory interface, while keeping low voltage reading capability, low power consumption and high reliability (retention, cycling). A multidisciplinary approach combining process, device and design architecture experiences of EPFL and EM will be used.

Abstract (French)

Improvement of the Swiss developed and manufactured EM¿s CMOS 180nm embedded Flash memory technology used for new product developments starting in 2012, and extension to 0.11um. Low power Flash memory is one of the unique selling points of EM products. Goal is to minimize the overall area of flash cell array and memory interface, while keeping low voltage reading capability, low power consumption and high reliability (retention, cycling). A multidisciplinary approach combining process, device and design architecture experiences of EPFL and EM will be used.