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Forschungsstelle
INNOSUISSE
Projektnummer
13333.1;11 PFFLR-NM
Projekttitel
High Efficiency Triple Junction Thin Film Silicon Solar Cells implementing Amorphous Silicon Germanium Alloy (TRIGGER)
Projekttitel Englisch
High Efficiency Triple Junction Thin Film Silicon Solar Cells implementing Amorphous Silicon Germanium Alloy (TRIGGER)

Texte zu diesem Projekt

 DeutschFranzösischItalienischEnglisch
Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Englisch)
High Efficiency Triple Junction Thin Film Silicon Solar Cells implementing Amorphous Silicon Germanium Alloy (TRIGGER)
Kurzbeschreibung
(Französisch)
High Efficiency Triple Junction Thin Film Silicon Solar Cells implementing Amorphous Silicon Germanium Alloy (TRIGGER)
Abstract
(Englisch)
Advanced triple junction solar cell will be developed to further enhance the conversion efficiency of Thin film Silicon solar cells. High quality silicon germanium alloys will be synthesized on textured substrates, and implemented in the triple junction solar cells. Record devices will be developed on state-of-the-art substrates as well as on advanced electrodes. Up-scaling in large-area commercial reactors will finally be done to demonstrate feasibility of the proposed novel cell design.
Abstract
(Französisch)
Advanced triple junction solar cell will be developed to further enhance the conversion efficiency of Thin film Silicon solar cells. High quality silicon germanium alloys will be synthesized on textured substrates, and implemented in the triple junction solar cells. Record devices will be developed on state-of-the-art substrates as well as on advanced electrodes. Up-scaling in large-area commercial reactors will finally be done to demonstrate feasibility of the proposed novel cell design.