ITO Sputtering Process for GaN-based Solid State Lighting

• Forschungsstelle: INNOSUISSE
• Projektnummer: 13170.1;8 PFFLM-NM
• Projekttitel Englisch: ITO Sputtering Process for GaN-based Solid State Lighting

Kurzbeschreibung (Englisch)

ITO Sputtering Process for GaN-based Solid State Lighting

Kurzbeschreibung (Französisch)

ITO Sputtering Process for GaN-based Solid State Lighting

Abstract (Englisch)

Nitride-based materials are currently among the most important materials in the optoelectronic industry. At room temperature, the bandgap energy of AlInGaN varies from 0.6 to 6.2 eV depending on its composition. III¿V nitride semiconductors are particularly useful for light emitting diodes (LEDs) in the short wavelength region. This has resulted in a variety of applications, such as traffic lights, full color displays, and solid-state lighting. In the case of lighting, white light LEDs are already commercially available by combining a yellow phosphor with a GaN blue LED chip. A key component in GaN-Based LEDs technology is the transparent contact layer deposited on top of the p-type semiconductor. Materials with low absorption in the blue wavelength range and high electrical conductivity are required to obtain high light extraction together with good device electrical characteristics. Indium¿tin¿oxide (ITO) is among the few materials that can be used for this purpose. However, its deposition process has to be optimized to achieve state of the art electrical and optical characteristics and minimize damage on the GaN surface arising from the deposition process itself. The aim of the project is to develop a state of the art ITO sputtering process for its exploitation and commercialization in the solid state lighting industry.

Abstract (Französisch)

Nitride-based materials are currently among the most important materials in the optoelectronic industry. At room temperature, the bandgap energy of AlInGaN varies from 0.6 to 6.2 eV depending on its composition. III¿V nitride semiconductors are particularly useful for light emitting diodes (LEDs) in the short wavelength region. This has resulted in a variety of applications, such as traffic lights, full color displays, and solid-state lighting. In the case of lighting, white light LEDs are already commercially available by combining a yellow phosphor with a GaN blue LED chip. A key component in GaN-Based LEDs technology is the transparent contact layer deposited on top of the p-type semiconductor. Materials with low absorption in the blue wavelength range and high electrical conductivity are required to obtain high light extraction together with good device electrical characteristics. Indium¿tin¿oxide (ITO) is among the few materials that can be used for this purpose. However, its deposition process has to be optimized to achieve state of the art electrical and optical characteristics and minimize damage on the GaN surface arising from the deposition process itself. The aim of the project is to develop a state of the art ITO sputtering process for its exploitation and commercialization in the solid state lighting industry.