Low Noise Integrated 3-Axis Hall Probe (a feasibility study) v.2

• Unité de recherche: INNOSUISSE
• Numéro de projet: 12015.1;5 PFNM-NM
• Titre du projet anglais: Low Noise Integrated 3-Axis Hall Probe (a feasibility study) v.2

Description succincte (Allemand)

Low Noise Integrated 3-Axis Hall Probe (a feasibility study) v.2

Description succincte (Anglais)

Low Noise Integrated 3-Axis Hall Probe (a feasibility study) v.2

Résumé des résultats (Abstract) (Allemand)

The goal of the project is to assess the feasibility of a 3-axis Hall teslameter fabricated in the low cost CMOS technology with much better resolution than that of the existing teslameter. We plan to achieve this by: the wise choice of the technology, more efficient front-end and signal read-out, and especially by the novel system level concept. The new probe will be realized in high voltage 0.35ìm CMOS technology, offering the best compromise between the spatial resolution and the measurement resolution (signal-to-noise ratio). The improvements in the front end (sensitivity of the Hall sensing devices), as well as the front-end signal read out (improved spinning current technique and electronics blocks designed for low noise and low offset) should contribute to high signal-to-noise ratio. The novel partitioning of the on-chip and off-chip functions of the teslameter should considerably increase measurement resolution on the system level.

Résumé des résultats (Abstract) (Anglais)

The goal of the project is to assess the feasibility of a 3-axis Hall teslameter fabricated in the low cost CMOS technology with much better resolution than that of the existing teslameter. We plan to achieve this by: the wise choice of the technology, more efficient front-end and signal read-out, and especially by the novel system level concept. The new probe will be realized in high voltage 0.35ìm CMOS technology, offering the best compromise between the spatial resolution and the measurement resolution (signal-to-noise ratio). The improvements in the front end (sensitivity of the Hall sensing devices), as well as the front-end signal read out (improved spinning current technique and electronics blocks designed for low noise and low offset) should contribute to high signal-to-noise ratio. The novel partitioning of the on-chip and off-chip functions of the teslameter should considerably increase measurement resolution on the system level.