High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

• Unité de recherche: INNOSUISSE
• Numéro de projet: 10724.1;5 PFNM-NM
• Titre du projet anglais: High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Description succincte (Allemand)

High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Description succincte (Anglais)

High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Résumé des résultats (Abstract) (Allemand)

Free electrons can move very fast in silicon, reaching speeds of up to 100 km/s. We want to exploit this by optimizing a CMOS-compatible photo-sensor technology developed in Switzerland and by fabricating new types of high-performance time-sampling pixels with it. We target a sampling time of <100ps, a timing resolution of <10ps and an uncooled photocharge detection noise of <3 electrons. The capabilities of these novel waveform-analysis image sensors will be demonstrated with a pulsed time-of-flight range camera offering a distance resolution of a few centimeters, as well as 1D/2D fluorescence microscopy imaging system without any expensive vacuum devices or cooling needs.

Résumé des résultats (Abstract) (Anglais)

Free electrons can move very fast in silicon, reaching speeds of up to 100 km/s. We want to exploit this by optimizing a CMOS-compatible photo-sensor technology developed in Switzerland and by fabricating new types of high-performance time-sampling pixels with it. We target a sampling time of <100ps, a timing resolution of <10ps and an uncooled photocharge detection noise of <3 electrons. The capabilities of these novel waveform-analysis image sensors will be demonstrated with a pulsed time-of-flight range camera offering a distance resolution of a few centimeters, as well as 1D/2D fluorescence microscopy imaging system without any expensive vacuum devices or cooling needs.