High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

• Forschungsstelle: INNOSUISSE
• Projektnummer: 10724.1;5 PFNM-NM
• Projekttitel Englisch: High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Kurzbeschreibung (Deutsch)

High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Kurzbeschreibung (Englisch)

High-speed semiconductor image sensing for pulsed time-of-flight ranging and fluorescence microscopy

Abstract (Deutsch)

Free electrons can move very fast in silicon, reaching speeds of up to 100 km/s. We want to exploit this by optimizing a CMOS-compatible photo-sensor technology developed in Switzerland and by fabricating new types of high-performance time-sampling pixels with it. We target a sampling time of <100ps, a timing resolution of <10ps and an uncooled photocharge detection noise of <3 electrons. The capabilities of these novel waveform-analysis image sensors will be demonstrated with a pulsed time-of-flight range camera offering a distance resolution of a few centimeters, as well as 1D/2D fluorescence microscopy imaging system without any expensive vacuum devices or cooling needs.

Abstract (Englisch)

Free electrons can move very fast in silicon, reaching speeds of up to 100 km/s. We want to exploit this by optimizing a CMOS-compatible photo-sensor technology developed in Switzerland and by fabricating new types of high-performance time-sampling pixels with it. We target a sampling time of <100ps, a timing resolution of <10ps and an uncooled photocharge detection noise of <3 electrons. The capabilities of these novel waveform-analysis image sensors will be demonstrated with a pulsed time-of-flight range camera offering a distance resolution of a few centimeters, as well as 1D/2D fluorescence microscopy imaging system without any expensive vacuum devices or cooling needs.